* Monolithic Construction With Built In Base-Emitter Shunt Resistors
* High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.)
* Industrial Use
* Complement to TIP145T/146T/147T Equivalent Circuit C July 2009 B 1 TO-220 1.Base 2.Collector 3.Emitter R1 R1 ≅ 8k
TIP141T
Fairchild Semiconductor
302.33 KB
Npn epitaxial silicon darlington transistor.
TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transi.
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