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TIP141T - NPN Epitaxial Silicon Darlington Transistor

Download the TIP141T datasheet PDF. This datasheet also covers the TIP140T variant, as both devices belong to the same npn epitaxial silicon darlington transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Monolithic Construction With Built In Base-Emitter Shunt Resistors.
  • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min. ).
  • Industrial Use.
  • Complement to TIP145T/146T/147T Equivalent Circuit C July 2009 B 1 TO-220 1.Base 2.Collector 3.Emitter R1 R1 ≅ 8kΩ R2 ≅ 0.12kΩ R2 E Absolute Maximum Ratings.
  • TA = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP140T : TIP141T : TIP142T 60 V 80 V 100 V VCE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TIP140T-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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TIP141 NPN TRANSISTORS CDIL
TIP141 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics

Other Datasheets by Fairchild (now onsemi)

Part Number Description
TIP141 NPN Epitaxial Silicon Darlington Transistor
TIP141F NPN Epitaxial Darlington Transistor
TIP140 NPN Epitaxial Silicon Darlington Transistor
TIP140F NPN Epitaxial Darlington Transistor
TIP140T NPN Epitaxial Silicon Darlington Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T Equivalent Circuit C July 2009 B 1 TO-220 1.Base 2.Collector 3.Emitter R1 R1 ≅ 8kΩ R2 ≅ 0.