FP2250QFN - PACKAGED LOW NOISE / HIGH LINEARITY PHEMT

Filtronic

FP2250QFN Datasheet Preview — Preview of FP2250QFN PDF

Datasheet Details

Part number	FP2250QFN
Manufacturer	Filtronic
File Size	233.15 KB
Description	PACKAGED LOW NOISE / HIGH LINEARITY PHEMT
Datasheet	FP2250QFN_Filtronic.pdf

FP2250QFN Product details

Description

AND APPLICATIONS The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).

Features

ES.
29 dBm Output Power at 1-dB Compression.
17 dB Power Gain at 2 GHz.
1.0 dB Noise Figure at 2 GHz.
42 dBm Output IP3.
50% Power-Added Efficiency.

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Published: Sep 8, 2009 |