FP2250QFN Description
AND APPLICATIONS The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 2250 µm Schottky barrier gate, defined by electronbeam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.
FP2250QFN Key Features
- 29 dBm Output Power at 1-dB pression
- 17 dB Power Gain at 2 GHz
- 1.0 dB Noise Figure at 2 GHz
- 42 dBm Output IP3
- 50% Power-Added Efficiency
- DESCRIPTION AND