Datasheet4U Logo Datasheet4U.com

FPD6836SOT343 - HIGH LINEARITY PACKAGED PHEMT

General Description

The FPD6836SOT343 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).

It utilizes a 0.25 µm x 360 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography.

📥 Download Datasheet

Datasheet Details

Part number FPD6836SOT343
Manufacturer Filtronic
File Size 215.98 KB
Description HIGH LINEARITY PACKAGED PHEMT
Datasheet download datasheet FPD6836SOT343 Datasheet

Full PDF Text Transcription for FPD6836SOT343 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FPD6836SOT343. For precise diagrams, and layout, please refer to the original PDF.

PRELIMINARY FPD6836SOT343 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE (1850 MHz) ♦ 0.5 dB Noise Figure ♦ 20 dBm Output Power (P1dB) ♦ 20 dB Small-Signal Gain (...

View more extracted text
Noise Figure ♦ 20 dBm Output Power (P1dB) ♦ 20 dB Small-Signal Gain (SSG) ♦ 32 dBm Output IP3 ♦ Evaluation Boards Available • DESCRIPTION AND APPLICATIONS The FPD6836SOT343 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 360 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. The FPD6836 is available in die form and i

More Datasheets from Filtronic

Part Number Description
FPD6836 0.25W POWER PHEMT
FPD6836P70 LOW NOISE HIGH FREQUENCY PACKAGED PHEMT
FPD10000AF 10W PACKAGED POWER PHEMT
FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS
FPD1000AS 1W PACKAGED POWER PHEMT
FPD1000V 1W POWER PHEMT
FPD1050 0.75W POWER PHEMT
FPD1500DFN HIGH LINEARITY PACKAGED PHEMTT
FPD1500P100 1W PACKAGED POWER PHEMT
FPD1500SOT89 HIGH LINEARITY PACKAGED PHEMTT