Description
The FPM2750QFN is a packaged pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specifically optimised for balanced configuration systems.
Wireless infrastructure: Tower mounted Amplifiers and front end LNAs for EGSM/PCS/WCDMA/UMTS base stations High intercept-point LNA
Features
- Balanced low noise amplifier module Excellent Noise figure: 0.4dB at 1850MHz Low drive current: 40mA typical (3.0V) Combined IP3: 36dBm (100mA) Combined P1dB: 23dBm (100mA) Small footprint: 4mm x 4mm x 0.9mm QFN RoHS compliant: (Directive 2002/95/EC)
Datasheet v2.5.
FPM2750QFN Datasheet
