* 14 dBm P-1dB at 12 GHz
* 9 dB Power Gain at 12 GHz
* 3.0 dB Noise Figure at 12 GHz
* DESCRIPTION AND APPLICATIONS DIE SIZE: 16.5 x 16.5 mils (420 x 4.

DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µ.

AND APPLICATIONS DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.) The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High E.

FP1000

FP1000A

FP1005R

FP1006

FP1007

FP1007R6

FP1009

FP1009A

FP100F

FP100R06KE3

FP100R07N3E4

FP100R07N3E4_B11

FP100R12KT4