Datasheet Details
| Part number | FP100 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 32.67 KB |
| Description | HIGH PERFORMANCE PHEMT |
| Download | FP100 Download (PDF) |
|
|
| Part number | FP100 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 32.67 KB |
| Description | HIGH PERFORMANCE PHEMT |
| Download | FP100 Download (PDF) |
|
|
|
AND APPLICATIONS DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.) The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The FP100
PRELIMINARY DATA SHEET FP100 HIGH PERFORMANCE PHEMT •.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | FP1000 | (FP1010 Series) SILICON SURGE SUPPRESSOR DIODES | ETC |
| ETC | FP1000A | (FP1010 Series) SILICON SURGE SUPPRESSOR DIODES | ETC |
 |
FP1005R | High current power inductors | EATON |
|
FP1006 | High current power inductors | EATON |
|
FP1007 | High current power inductors | EATON |
| Part Number | Description |
|---|---|
| FP1510SOT89 | LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT |