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Filtronic Compound Semiconductors

FP100 Datasheet Preview

FP100 Datasheet

HIGH PERFORMANCE PHEMT

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PRELIMINARY DATA SHEET
FP100
HIGH PERFORMANCE PHEMT
FEATURES
14 dBm P-1dB at 12 GHz
9 dB Power Gain at 12 GHz
3.0 dB Noise Figure at 12 GHz
DESCRIPTION AND APPLICATIONS
DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm)
DIE THICKNESS: 3.9 mils (100 µm typ.)
BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.)
The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25 um by 100 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The FP100 features Si3N4 passivation.
Typical applications include general purpose, low noise and broadband amplifiers in the 2-20 GHz
range. The device is well-suited for telecommunication applications.
ELECTRICAL SPECIFICATIONS @ TAmbient = 22 ± 3 °C
Parameter
Output Power @
1dB Compression
Power Gain @
1dB Compression
Maximum Available Gain
Noise Figure
Power-Added Efficiency
Saturated Drain-Source Current
Transconductance
Pinch-Off Voltage
Gate-Drain Breakdown
Voltage Magnitude
Gate-Source Breakdown
Voltage Magnitude
Gate-Source Leakage
Current Magnitude
Symbol
P1dB
G1dB
MAG
NF
η
IDSS
GM
VP
|VBDGD|
|VBDGS|
|IGSL |
Test Conditions
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
f = 12 GHz; VDS = 5V; IDS = 50% IDSS;
POUT = 15.5 dBm
VDS = 2 V; VGS = 0 V
VDS = 2 V; VGS = 0 V
VDS = 2 V; IDS = 1 mA
IGS = 1 mA
IGS = 1 mA
VGS = -5 V
Min
13
8
14.5
20
15
15
-0.50
8
7
Typ Max Units
14 dBm
9 dB
15.5 dB
3.0 dB
25 %
30
20
-2.5
10.5
mA
mS
V
V
10 V
4 10 µA
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Email: sales@filss.com
Revised: 07/18/01




Filtronic Compound Semiconductors

FP100 Datasheet Preview

FP100 Datasheet

HIGH PERFORMANCE PHEMT

No Preview Available !

PRELIMINARY DATA SHEET
FP100
HIGH PERFORMANCE PHEMT
RECOMMENDED CONTINUOUS OPERATING LIMITS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
RF Input Power
Channel Operating Temperature
Ambient Temperature
Symbol
VD S
VG S
ID S
PIN
TCH
TSTG
Nominal
5
-0.8
0.5 IDSS
30
150
-20/50
Units
V
V
mA
mW
°C
°C
Note: Device should be operated at or below Recommended Continuous Operating Limits for reliable performance.
ABSOLUTE RATINGS
Parameter
Symbol
Test Conditions
Min Max Units
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
Channel Operating Temperature
Storage Temperature
VD S
VG S
ID S
IG
PIN
TCH
TSTG
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
7
-3
IDSS
2.5
60
175
-65 175
V
V
mA
mA
mW
ºC
ºC
Note: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage
to the device.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
All information and specifications are subject to change without notice.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Email: sales@filss.com
Revised: 07/18/01


Part Number FP100
Description HIGH PERFORMANCE PHEMT
Maker Filtronic Compound Semiconductors
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FP100 Datasheet PDF






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