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BT152-600RG Datasheet Preview

BT152-600RG Datasheet

SCRs

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BT152-400R(600R,800R)G
SCRs
Description
Standard gate triggering SCR is fully isolated package suitable
for the application where requiring high bidirectional blocking
voltage capability and also suitable for over voltage protection,
motor control circuit in power tool, inrush current limit circuit and
heating control system.
Simplified outline
TO-220AB
123
Features
Blocking voltage to 800 V
On-state RMS current to 20 A
Ultra low gate trigger current
Applications
Motor control
Industrial and domestic lighting
Heating
Static switching
Symbol
ak
g
Pin
1
2
3
TAB
Description
cathode
anode
gate
anode
SYMBOL
V DRM
V RRM
PARAMETER
Repetitive peak off-state voltages
Voltages
ITR MS
ITSM
RMS on-state current
Non-repetitive peak on-state current
400RG
600RG
800RG
Value
450
650
800
20
200
Unit
V
A
A
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance
Junction to mounting base
Thermal resistance
Junction to ambient
CONDITIONS MIN
-
In free air
-
TYP
-
60
MAX
1.1
-
UNIT
K/W
K/W
@ 2010 Copyright By American First Semiconductor
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First Semiconductor

BT152-600RG Datasheet Preview

BT152-600RG Datasheet

SCRs

No Preview Available !

BT152-400R(600R,800R)G
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN
VDRM
V RRM
Repetitive peak off-state
Voltages
500RG
650RG
800RG
-
I TAV
I T(RMS)
ITSM
It2
DI T/dt
I GM
V GM
P GM
P G(A V)
T stg
Tj
Average on-state current
RMS on-state current
Non-repetitive peak
On-state current
I2t for fusing
Half sine wave;Tmb<=103
All conduction angles
half sine wave; Tj = 25
prior to surge
T=10ms
T=10ms
T=8.3ms
Repetitive rate of vise of
on-state current after
trigering
I =TM 50 A; IG=0.2 A;
DIG/dt=0.2 A/ s
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Over any 20 ms period
Storage temperature
Operating junction
Temperature
-
-
-
-
-
-
-
-
-
-
-40
-
MAX
500
650
800
13
20
200
220
200
200
UNIT
V
A
A
A
A
A2S
A/ s
5A
5V
20 W
0.5 W
150
125
TJ =25 C unless otherwise stated
SYMBOL PARAMETER
Static characteristics
CONDITIONS
IGT
Gate trigger current
VDT=12V; I =0.1A
MIN TYP MAX UNIT
- 3 32 mA
IL
Latching current
VDG=12V; I T=0.1A
- 25 80 mA
IH Holding current
VDG=12V; I T=0.1A
VT On-state voltage
IT=40A
V GT
Gate trigger voltage
VDT=12V;I =0.1A
V =VD DRM(max) ;IT=0.1A;T J=125 OC
ID Of f-state leakage current V=D V ;V=DRM(max) R VRRM(max) TJ=125OC
-
-
-
0.25
-
Dynamic Characteristics
D/VD dt
t gt
Critical rate of rise of
Off-state voltage
Gate controlled turn-on
time
tg
Crcuit commutated tum-
off time
VDM=67% VDRM(max) ;Tj=125 oC;
exponential wave form; gate open circuit
ITM=40A;V =V ;D DRM(max) IG=0.1A;
Dl G/dt=5A/ s
V =DM 67% V ;DRM(max) Tj=125oC;I =TM 50A
V =RT 25V;dI M/dt=30A/ S
DlG/dt=50V/ s;RGK=100
200
-
-
15 60
1.4 1.75
0.6 1.5
0.4 -
0.2 1.0
300 -
2-
70 -
mA
V
V
V
mA
V/ s
s
s
www.First-semi.com
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Part Number BT152-600RG
Description SCRs
Maker First Semiconductor
PDF Download

BT152-600RG Datasheet PDF





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