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MCR100-8G Datasheet Preview

MCR100-8G Datasheet

SCRs

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MCR100-8G
SCRs
Description
Glass passivated, sensitive gate thyristors in a plastic envelope,
intended for use in general purpose switching and phase control
applications. These devices are intended to be interfaced directly
to microcontrollers, logic integrated circuits and other low power
gate trigger circuits.
Features
Blocking voltage to 600 V
On-state RMS current to 0.8 A
Ultra low gate trigger current
Simplified outline
TO-92
123
Symbol
ak
g
Applications
Motor control
Industrial and domestic lighting
Heating
Static switching
Pin
1
2
3
TAB
Description
cathode
anode
gate
anode
SYMBOL
VDRM
IT RMS
ITSM
PARAMETER
Repetitive peak off-state voltages
RMS on-state current full sine wave
Non-repetitive peak on-state current
(full cycle,Tj initial=25 )
Value
600
0.8
10
Unit
V
A
A
SYMBOL
R JC
R JA
TL
PARAMETER
Thermal resistance,Junction to Case
Junction to Ambient
Lead Solder Temperature
CONDITIONS
<1/16 from case,10
secs max
MIN
-
-
TYP
-
260
MAX
75
200
-
UNIT
/W
@ 2010 Copyright By American First Semiconductor
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First Semiconductor

MCR100-8G Datasheet Preview

MCR100-8G Datasheet

SCRs

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MCR100-8G
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL
V VDRM, RRM
IT(RMS)
PARAMETER
Peak repetitive off-state
Voltages
RMS on-state current 180
CONDITIONS
Tj = -40 to 110 sine wave
50 to 60 Hz gate open
conduction angles
MCR100-6
MCR100-8
Tc =80
MIN
-
-
ITSM
Peak non-repetitive
surge current
1/2cycle,sine
wave,60Hz,Tj=25
-
I2t circuit fusing consideration
t=8.3ms
-
I ,IDRM RRM
Peak repetitive forward
or reverse blocking
current
VD=rated VDRM and V ;RRM
R =GK 1k
Tc =25
Tc =110
-
-
MAX
400
600
0.8
UNIT
V
A
10 A
0.415
A2S
10 A
100 A
IGFM
VGRM
PGM
P G(AV)
Tstg
TJ
Forward peak gate curren
Reverse peak gate voltage
Forward peak gate power
Forward average gate power
Storage temperature range
TA=25 ,Pulse Width<=1.0
TA=25 ,Pulse Width<=1.0
TA=25 ,Pulse Width<=1.0
TA=25 , t=8.3ms
s
s
s
Operating junction temperature range @ rate V aRRM nd VDRM
-1A
-5V
- 0.1 W
- 0.01 W
-40 150
-40 125
TJ =25 C unless otherwise stated
SYMBOL PARAMETER
Static characteristics
CONDITIONS
IGT
Gate trigger current
V =AK 7.0Vdc,RL=100
MIN TYP MAX UNIT
Tc =25
- 40 200 A
IL Latch current
V =AK 7.0V,lg=200 A
Tc =25
Tc =-40
- 0.6 10 mA
- - 15 mA
IH
Holding current
V =AK 7.0Vdc,lnitiating Current=20mA
Tc=25
- 0.5 5.0 mA
Tc=-40
- - 10 mA
VTM
Peak forward on-state voltage
I =TM 1.0A Peak;@TA=25
Gate trigger voltage
V =AK 7.0Vdc,RL=100
VGT Tc=25
Tc=-40
- - 1.7
- 0.62 0.8
- - 1.2
V
V
V
Dynamic Characteristics
dv/dt
Critical rate of rise of
off-state voltage
di/dt
Critical rate-of-rise of
on-state current
VD=Rated V ,DRM Exponential
Waveform,R =GK 1k
Tj=110
I =PK 20A;PW=10 sec;
diG/dt=1A/ sec,lgt=20mA
20 35
- V/ s
- - 50 A/ s
www.First-semi.com
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Part Number MCR100-8G
Description SCRs
Maker First Semiconductor
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MCR100-8G Datasheet PDF






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