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MCR106-6G Datasheet Preview

MCR106-6G Datasheet

sensitive gate thyristors

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MCR106-6G,MCR106-8G
SCRs
Description
Glass passivated, sensitive gate thyristors in a plastic envelope,
intended for use in general purpose switching and phase control
applications. These devices are intended to be interfaced directly
to microcontrollers, logic integrated circuits and other low power
gate trigger circuits.
Simplified outline
TO-126
Features
Blocking voltage to 400 V
On-state RMS current to 4 A
Ultra low gate trigger current
Symbol
ak
g
Applications
Motor control
Industrial and domestic lighting
Heating
Static switching
Pin
1
2
3
TAB
Description
cathode
anode
gate
anode
SYMBOL
VDRM
IT RMS
ITSM
PARAMETER
Repetitive peak off-state voltages
MCR106-6G
MCR106-8G
RMS on-state current full sine wave
Non-repetitive peak on-state current
(full cycle,Tj initial=25 )
Value
400
600
4
25
Unit
V
A
A
SYMBOL
PARAMETER
R JC
Thermal resistance,
Junction to Case
R JA
Thermal resistance,
Junction to Ambient
CONDITIONS MIN TYP MAX UNIT
- - 3.0 /W
- - 75 /W
@ 2010 Copyright By American First Semiconductor
Page 1/4




First Semiconductor

MCR106-6G Datasheet Preview

MCR106-6G Datasheet

sensitive gate thyristors

No Preview Available !

MCR106-6G,MCR106-8G
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL
VDRM
IT(RMS)
PARAMETER
Repetitive peak off-state
Voltages
RMS on-state current
CONDITIONS
Tj=-40 to 110 ,sine wave
50 to 60 Hz,gate open
180oconduction angles
MCR106-6G
MCR106-8G
TC=93
MIN
-
-
I T ( AV )
Average On-state current 180oconduction angles
TC=93
-
I2t
IDRM
IRRM
IGM
VRGM
PGM
P G(AV)
Tstg
Tj
Circuit Fusing considerations
t=8.3ms
Peak repetitive forward or VAK=Rated VDRM or VRRM;
reverse blocking current RGK=1000 Ohms
Tj=25
Tj=110
Forward peak gate current
Peak Reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
Temperature range
Tc=93 ,Pulse Width<=1.0 s
Tc=93 ,Pulse Width<=1.0 s
Tc=93 ,Pulse Width<=1.0 s
Tc=93 ,t=8.3ms
-
-
-
-
-
-
-
-40
-40
MAX
400
600
4
UNIT
V
A
2.55 A
2.6 A2S
10 A
200 A
0.2 A
6V
0.5 W
0.1 W
150
110
TJ =25 C unless otherwise stated
SYMBOL PARAMETER
Static characteristics
CONDITIONS
IGT
Gate trigger current
VAK=7.0Vdc,RL=100 Ohms
TC=-40
MIN TYP MAX UNIT
- - 200 A
500
VTM Peak Forward
on-state voltage
ITM=4A Peak
- - 2.0 V
IH
Holding current
V =AK 7.0Vdc,lnitiating Current=20mA
gate open
- - 5.0 mA
VGD
Non-trigger voltage
VAK=12Vdc,RL=100 Ohms,Tj=110
0.2 -
-V
VGT
Gate trigger voltage
VAK=7.0Vdc,RL=100 Ohms
- - 1V
Dynamic Characteristics
DV/dt
Critical rate of rise of
Off-state voltage
di/dt
Critical Rate-of-Rise of
Off State Current
Tj=110
lpk=20A;PW=10 sec;
diG/dt=1A/ sec,lgt=20mA
- 10 - V/ s
- - 50 A/ s
www.First-semi.com
Page 2/4


Part Number MCR106-6G
Description sensitive gate thyristors
Maker First Semiconductor
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MCR106-6G Datasheet PDF





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