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MCR22-6G Datasheet Preview

MCR22-6G Datasheet

sensitive gate thyristors

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MCR22-6G,MCR22-8G
SCRs
Description
Glass passivated, sensitive gate thyristors in a plastic envelope,
intended for use in general purpose switching and phase control
applications. These devices are intended to be interfaced directly
to microcontrollers, logic integrated circuits and other low power
gate trigger circuits.
Features
Blocking voltage to 600 V
On-state RMS current to 1.5 A
Ultra low gate trigger current
Simplified outline
TO-92
123
Symbol
ak
g
Applications
Motor control
Industrial and domestic lighting
Heating
Static switching
Pin
1
2
3
TAB
Description
cathode
anode
gate
anode
SYMBOL
VDRM
IT RMS
ITSM
PARAMETER
Repetitive peak off-state voltages
MCR22-6G
MCR22-8G
RMS on-state current full sine wave
Non-repetitive peak on-state current
(full cycle,Tj initial=25 )
Value
400
600
1.5
15
Unit
V
A
A
SYMBOL
PARAMETER
R JC
R JA
Thermal resistance,
Junction to Case
Thermal resistance,
Junction to Ambient
CONDITIONS MIN
-
-
TYP
-
-
MAX
50
UNIT
/W
160 /W
@ 2010 Copyright By American First Semiconductor
Page 1/5




First Semiconductor

MCR22-6G Datasheet Preview

MCR22-6G Datasheet

sensitive gate thyristors

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MCR22-6G,MCR22-8G
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL
VDRM
VRRM
IT(RMS)
PARAMETER
Repetitive peak off-state
Voltages
RMS on-state current
CONDITIONS
R =GK 1K,TJ=-40 to +110
MCR22-6G
Sine wave,50to60 Hz,gate open MCR22-8G
180o Conduction Angles,Tc=80
MIN
-
-
ITSM
Non-repetitive peak
Current
1/2Cycle,sine wave,60 Hz
-
I2t
IDRM
IRRM
IFGM
VRGM
PGM
P G(AV)
Tstg
Tj
Circuit fusing considerations t=8.3ms
Peak repetitive forward
or reverse blocking
current
Forward Peak gate current
Reverse Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
Temperature Range
VAK=Rated VDRM or VRRM
RGK=1000Ohms
TC=25
TC=110
TA=25 ,Pulse Width<=1.0 s
TA=25 ,Pulse Width<=1.0 s
TA=25 ,Pulse Width<=1.0 s
TA=25 ,Pulse Width<=1.0 s
-
-
-
-
-
-
-
-40
-
MAX
400
600
1.5
UNIT
V
A
15 A
0.9 A2S
10 A
200 A
0.2 A
5V
0.5 W
0.1 W
150
110
TJ =25 C unless otherwise stated
SYMBOL PARAMETER
Static characteristics
CONDITIONS
IGT
Gate trigger current
VAK=6.0Vdc,RL=100 Ohms
Tc=25
Tc=-40
MIN TYP MAX UNIT
- 30 200
- 500 A
TL
Lead solder Temperature Lead Length>=1/16 from case,10s Max
-
- 260
IH
Holding current
V =AK 12Vdc,lnitiating Current=200mA
TC=25
- 2.0 5.0 mA
TC=-40
- 10 mA
VTM On-state voltage
ITM=1.0A Peak
Gate trigger voltage
VAK=7.0Vdc,RL=100 Ohms
VGT TC=25
TC=-40
- 1.2 1.7 V
- - 0.8 V
- - 1.2 V
Dynamic Characteristics
DV/dt
Critical rate of rise of
Off-state voltage
di/dt
Critical Rate-of-Rise of
Off State Current
Tc=110
- 25 - V/ s
- - - A/ s
www.First-semi.com
Page 2/5


Part Number MCR22-6G
Description sensitive gate thyristors
Maker First Semiconductor
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