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SEMICONDUCTOR
TECHNICAL DATA
MBRD10200CT
MBRD10200CT SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications
Q
AI CJ
BD
H FF
123
1 ANODE 2 CATHODE 3 ANODE
E
DIM MILLIMETERS
A 6 50 ± 0 2
B 5 60 ± 0 2 C 5 20 ± 0 2
D 1 50 ± 0 2
O
E 2 70 ± 0 2 F 2 30 ± 0 1
H 1 00 MAX
LI J
2 30 ± 0 2 05± 01
L 0 50 ± 0 10 O 16±02
Q 0 95 MAX
1 22 3
TO-252 (D-PAK)
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
Value
VRRM VRWM VR(RMS)
IO
IFSM
Peak repetitive reverse voltage Working peak reverse voltage RMS revers
MBRD10200CT Datasheet
