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Formosa MS

FM1100-M Datasheet Preview

FM1100-M Datasheet

Chip Schottky Barrier Diode

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Chip Schottky Barrier Diodes
FM120-M THRU FM1100-M
Formosa MS
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC SOD-123 / MINISMA
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.04 gram
SOD-123
0.161(4.1)
0.146(3.7)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.110(2.8)
0.094(2.4)
0.035(0.9) Typ.
0.063(1.6)
0.055(1.4)
0.035(0.9) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
VR = VRRM TA = 25oC
VR = VRRM TA = 125oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol
IO
IFSM
IR
RqJA
CJ
TSTG
MIN.
-55
TYP.
98
120
MAX.
1.0
UNIT
A
30 A
0.5
10
+150
mA
mA
oC / w
pF
oC
SYMBOLS
FM120-M
FM130-M
FM140-M
FM150-M
FM160-M
FM180-M
FM1100-M
MARKING
CODE
12
13
14
15
16
18
10
VRRM *1 VRMS *2
(V)
20
30
40
50
60
80
100
(V)
14
21
28
35
42
56
70
VR *3
(V)
20
30
40
50
60
80
100
VF *4
(V)
0.50
0.70
0.85
Operating
temperature
(o C)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage




Formosa MS

FM1100-M Datasheet Preview

FM1100-M Datasheet

Chip Schottky Barrier Diode

No Preview Available !

RATING AND CHARACTERISTIC CURVES (FM120-M THRU FM1100-M)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160 180 200
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
30
24
18
Tj=25 C
8.3ms Single Half
12 Sine Wave
JEDEC method
6
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
350
300
250
200
150
100
50
0
.01
FIG.4-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
50
10
3.0
1.0
0.1
FM180-M~FM1100-M
Tj=25 C
Pulse Width 300us
1% Duty Cycle
.01
.1
.3 .5 .7 .9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
100
10
1.0
Tj=75 C
.1
Tj=25 C
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)


Part Number FM1100-M
Description Chip Schottky Barrier Diode
Maker Formosa MS
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FM1100-M Datasheet PDF






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