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Formosa MS

FM1100 Datasheet Preview

FM1100 Datasheet

Chip Schottky Barrier Diode

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Chip Schottky Barrier Diodes
FM120 THRU FM1100
Formosa MS
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
SMA
0.185(4.8)
0.177(4.4)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.040(1.0) Typ.
0.067(1.7)
0.060(1.5)
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
PARAMETER
Forward rectified current
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
(AT TA=25oC unless otherwise noted)
CONDITIONS
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25oC
VR = VRRM TA = 125oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol
IO
IFSM
IR
RqJA
CJ
TSTG
MIN.
-55
TYP.
88
120
MAX.
1.0
UNIT
A
30 A
0.5
10
+150
mA
mA
oC / w
pF
oC
SYMBOLS
FM120
FM130
FM140
FM150
FM160
FM180
FM1100
MARKING
CODE
SS12
SS13
SS14
SS15
SS16
SS18
S110
VRRM *1
(V)
20
30
40
50
60
80
100
VRMS *2
(V)
14
21
28
35
42
56
70
VR *3
(V)
20
30
40
50
60
80
100
VF *4
(V)
0.50
0.70
0.85
Operating
temperature
(oC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage




Formosa MS

FM1100 Datasheet Preview

FM1100 Datasheet

Chip Schottky Barrier Diode

No Preview Available !

RATING AND CHARACTERISTIC CURVES (FM120 THRU FM1100)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160 180 200
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
30
24
18
Tj=25 C
8.3ms Single Half
12 Sine Wave
JEDEC method
6
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
350
300
250
200
150
100
50
0
.01
FIG.4-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
50
10
3.0
1.0
0.1
FM180~FM1100
Tj=25 C
Pulse Width 300us
1% Duty Cycle
.01
.1
.3 .5 .7 .9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
100
10
1.0
Tj=75 C
.1
Tj=25 C
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)


Part Number FM1100
Description Chip Schottky Barrier Diode
Maker Formosa MS
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FM1100 Datasheet PDF






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