silicon n-channel power mosfet.
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* Fast body diode eliminates the need for external diode in ZVS applications.
* Lower Gate charge results in simpler drive requirements
* Higher Gate voltag.
* Lower Gate charge results in simpler drive requirements
* Higher Gate voltage threshold offers improved noise.
FMD5N50E5, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in
various power swit.
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