AO8808 Datasheet Dual N-Channel FET

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

AO8808 dual n-channel fet by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	AO8808
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	201.46 KB
Description	Dual N-Channel FET
Download	AO8808 Download (PDF)

General Description

The AO8808 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V V GS(MAX) rating.

This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration.

Standard Product AO8808 is Pb-free (meets ROHS & Sony 259 specifications).

Overview

AO8808 Dual N-Channel Enhancement Mode Field Effect Transistor.

Key Features

VDS (V) = 20V ID = 8A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 15mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 2.5V) RDS(ON) < 28mΩ (VGS = 1.8V) TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 G2 S2 D1 D2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±12 8 6.3 30 1.4 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C.

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