l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax.

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.

IRF2804L

IRF2804LPbF

IRF2804PbF

IRF2804S

IRF2804S-7P

IRF2804S-7PPbF

IRF2804SPbF

IRF2805

IRF2805L

IRF2805LPbF

IRF2805S

IRF2805SPbF

IRF2807