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AOD3N40 Datasheet N-channel MOSFET

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: AOD3N40 400V,2.6A N-Channel MOSFET General.

General Description

The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC- DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.

Key Features

  • VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 500V@150℃ 2.6A < 3.1Ω TO252 DPAK D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25° C B Power Dissipation Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" fr.

Similar Datasheet

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More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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AOD210 N-Channel MOSFET
AOD240 N-Channel MOSFET
AOD242 N-Channel MOSFET
AOD2908 N-Channel MOSFET
AOD405 P-Channel MOSFET

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