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AOI418 Datasheet

30V N-Channel MOSFET

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AOI418 pdf
AOD418/AOI418
30V N-Channel MOSFET
General Description
The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate
resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high
current load applications.
Features
VDS
ID (at VGS= 10V)
RDS(ON) (at VGS= 10V)
RDS(ON) (at VGS = 4.5V)
30V
36A
< 7.5m
< 11m
D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
36
28
125
13.5
10.5
27
36
50
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16
41
2.5
Max
20
50
3
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/6
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Freescale Semiconductor Electronic Components Datasheet

AOI418 Datasheet

30V N-Channel MOSFET

No Preview Available !

AOI418 pdf
AOD418/AOI418
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
Conditions
Min Typ Max Units
ID=250µA, VGS=0V
VDS=30V, VGS=0V
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
TO252
VGS=4.5V, ID=20A
TO252
VGS=10V, ID=20A
TO251A
VGS=4.5V, ID=20A
TO251A
30
TJ=55°C
1.5
125
TJ=125°C
1
5
±100
1.95 2.5
6.2 7.5
9.5 11.5
8.5 11
6.7 8
9 11.5
V
µA
nA
V
A
m
m
m
m
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous CurrentG
63
0.72 1
36
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
920 1150 1380
125 180 235
60 105 150
0.55 1.1 1.65
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
16 20 24 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
7.6 9.5 11
2.7 nC
Qgd Gate Drain Charge
5 nC
tD(on)
Turn-On DelayTime
6.5 ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
2
17
ns
ns
tf Turn-Off Fall Time
3.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
7 8.7 10.5 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
11 13.5 16
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/6
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Part Number AOI418
Description 30V N-Channel MOSFET
Maker Freescale
Total Page 6 Pages
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