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AON2800 Datasheet

20V Dual N-Channel MOSFET

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AON2800
20V Dual N-Channel MOSFET
General Description
The AON2800 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R .DS(ON) This device is ideal for load switch and battery protection applications.
Features
VDS
ID (at VGS=4.5V)
RDS(ON) (at VGS=4.5V)
RDS(ON) (at VGS=2.5V)
20V
4.5A
< 47m
< 65m
DFN 2x2 Package
S1 G1 D2
Pin 1
D1
Pin 1
Top
D1 G2 S2
Bottom
G1 G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±8
4.5
3.8
24
1.5
0.95
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient B
Maximum Junction-to-Ambient B
t 10s
Steady-State
t 10s
Steady-State
Symbol
RθJA
RθJA
Typ
35
65
120
175
Max
45
85
155
235
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
1/5
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Freescale Semiconductor Electronic Components Datasheet

AON2800 Datasheet

20V Dual N-Channel MOSFET

No Preview Available !

AON2800
20V Dual N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=20V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±8V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=4A
VGS=2.5V, ID=3A
Forward Transconductance
VDS=5V, ID=4A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=4.5V, VDS=10V, ID=4A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=4.5V, VDS=10V, RL=2.5,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=4A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
Min
20
0.4
24
285
45
30
1.7
Typ
0.8
37
55
47
14
0.7
360
65
50
3.5
4.15
0.55
1.15
9.5
43
26
39
11
3
Max Units
V
1
µA
5
20 µA
1.2 V
A
47
m
70
65 m
S
1V
1.5 A
435 pF
85 pF
70 pF
5.3
6 nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
B. The value of R θJA is measured with the device mounted on a minimum pad board with 2oz. Copper, in a still air environment with T A =25°C.
The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
C. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
2/5
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/


Part Number AON2800
Description 20V Dual N-Channel MOSFET
Maker Freescale
Total Page 5 Pages
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