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AON2801 Datasheet

Dual P-Channel Enhancement Mode Field Effect Transistor

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AON2801 pdf
AON2801
Dual P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AON2801/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications. AON2801 and AON2801L are electrically identical.
-RoHS Compliant
-Halogen Free*
Features
VDS (V) = -20V
ID = -3A
(VGS = -4.5V)
RDS(ON) < 120m(VGS = -4.5V)
RDS(ON) < 160m(VGS = -2.5V)
RDS(ON) < 200m(VGS = -1.8V)
DFN 2x2 Package
S1 G1 D2
D1 D2
D1 G2 S2
Top Bottom
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
CurrentA
TA=70°C
Pulsed Drain Current C
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PDSM
TJ, TSTG
G1 G2
S1
Maximum
-20
±8
-3
-2.3
-15
1.5
0.95
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient B
Maximum Junction-to-Ambient B
t ≤ 10s
Steady-State
t ≤ 10s
Steady-State
Symbol
RθJA
RθJA
Typ
35
65
120
175
Max
45
85
155
235
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
1/5
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Freescale Semiconductor Electronic Components Datasheet

AON2801 Datasheet

Dual P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AON2801 pdf
AON2801
Dual P-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-20V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-3A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-2.6A
VGS=-1.8V, ID=-1.5A
Forward Transconductance
VDS=-5V, ID=-3A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
-20
-0.3
-15
-0.55
-1
-5
±100
-1
100
135
128
160
6
-0.76
120
170
160
200
-1
V
µA
nA
V
A
m
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
540 700
90
63
9.5
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=-4.5V, VDS=-10V, ID=-3A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=-4.5V, VDS=-10V, RL=1.5,
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-3A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs
5 6.5
1.2
1
5
40
28.5
46
21 28
9.1
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The
Power
value of R
dissipation
θJA is measured with
PDSM is based on R
the device
θJA and the
mounted on 1in 2 FR-4 board with 2oz. Copper, in
maximum allowed junction temperature of 150°C.
Ta-h1set5ilvl aaliureeninviaronnymgievnetnwaitphpTlicAa=tio2n5°dCe.pTehneds
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
B. The value of R θJA is measured with the device mounted on a minimum pad board with 2oz. Copper, in a still air environment with T A =25°C.
The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
C. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 7111 (Oct 15 2007).
Rev 2: Sep 2008
2/5
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/


Part Number AON2801
Description Dual P-Channel Enhancement Mode Field Effect Transistor
Maker Freescale
Total Page 5 Pages
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