Dual P-Channel Enhancement Mode Field
Electrical Characteristics (TJ=25°C unless otherwise noted)
Min Typ Max Units
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=-4.5V, VDS=-10V, ID=-3A
Qgd Gate Drain Charge
Turn-On Rise Time
VGS=-4.5V, VDS=-10V, RL=1.5Ω,
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-3A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs
value of R
θJA is measured with
PDSM is based on R
θJA and the
mounted on 1in 2 FR-4 board with 2oz. Copper, in
maximum allowed junction temperature of 150°C.
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
B. The value of R θJA is measured with the device mounted on a minimum pad board with 2oz. Copper, in a still air environment with T A =25°C.
The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
C. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 7111 (Oct 15 2007).
Rev 2: Sep 2008
Free Datasheet http://www.datasheet4u.com/