AOT11S65 transistor equivalent, power transistor.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 45A 0.399Ω 13.2nC 2.9µJ
D
G S
C unless otherwise noted Absolute Maximum Ratings TA=25° Symbol AOT11S65/AOB11S65 Pa.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly int.
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