MC3414 Datasheet | Freescale Semiconductor

Freescale N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. - - - - Low r DS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology AO3414/MC3414 / PRODUCT SUMMARY VDS (V) r DS(on) (Ω) 0.047 @ VGS = 4.5V 20 0.055@ VGS = 2.5V 0.087@ VGS = 1.8V ID (A) 4.3 4.0 3.2 ABSOLUTE MAX IMUM RATING S (T ISE NOTED) A = 25 C UNLESS OTHERW Param eter Sym bol Ratings Units D rain -So u rce Voltage 20 VDS V VGS G ate-S o u rce Voltage ± 8 C o n ti n u o u s Drain Current Pulsed Drain Current b a a o T = 2 5C A TA=70 C o o ID IDM IS 4.3 3.6 10 1.6 1.3 0.9 A W o C o n ti n u o u s S o u rce C u rren t (D i o d e Conduction) Po w er Dissipation a T = 2 5C A TA=70 C o o Operating Junction and Sto rag e T em p eratu re Range TJ, Tstg -55 to 150 THERM AL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol M aximum R T HJA 100 166 Units o t <= 5 sec Steady-State C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 .freescale.net.cn Free Datasheet http://../ Freescale / SPECIFICATIONS (T A = 25o C UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A Drain-Source On-Resistance A Forward Tranconductance A Diode Forward Voltage VGS(th) IGSS IDSS ID(on) r DS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf VDS = VGS, ID = 250 u A VDS = 0 V, VGS = 8...