MC3419
MC3419 is P-Channel 20-V (D-S) MOSFET manufactured by Freescale Semiconductor.
Freescale P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones.
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- - Low r DS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology
AO3419/ MC3419
PRODUCT SUMMARY VDS (V) r DS(on) (OHM) 0.100 @ VGS = -4.5V -20 0.160 @ VGS = -2.5V 0.290 @ VGS = -1.8V
ID (A) -2.9 -2.3 -1.7
ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage -20 VDS V VGS Gate-Source Voltage ± 12 Continuous Drain Current Pulsed Drain Current b a a o
TA=25 C TA=70 C o o
ID IDM IS
-2.9 -2.4 -10 ± 1.6 1.25 0.8 A W o
Continuous Source Current (Diode Conduction) Power Dissipation a
TA=25 C TA=70 C o o
PD TJ, Tstg
Operating Junction and Storage Temperature Range
-55 to 150
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambient a
Symbol Maximum Units
RΤΗ JA 100 166 o t <= 5 sec Steady-State
C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1
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Freescale
AO3419/ MC3419
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parame te r Static
Gate-Thres hold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
A o
Symbol
VGS(th) IGSS IDSS ID(on)
Te s t Conditions
VD S = VGS, ID = -250 u A
VDS = 0 V, VGS = +/-12...
