TJ15P04M3 mos equivalent, mosfets silicon p-channel mos.
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -0.8 to -2.
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* DC-DC Converters Desktop Computers
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 28 mΩ .
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