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AFT05MS004NT1 - RF Power LDMOS Transistor

General Description

Part Number Manufacturer B1 RF Bead, Short 2743019447 Fair--Rite C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C2, C11 0.1 F Chip Capacitors CDR33BX104AKWS AVX C3, C10 0.01 F Chip Capacitors C0805C103K5RAC Kemet C4, C9 180 pF Chip Capacitors ATC100B181JT300XT ATC C5

Key Features

  • Characterized for Operation from 136 to 941 MHz.
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization.
  • Integrated ESD Protection.
  • Integrated Stability Enhancements.
  • Wideband.
  • Full Power Across the Band.
  • Exceptional Thermal Performance.
  • Extreme Ruggedness.
  • In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Typical.

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Full PDF Text Transcription for AFT05MS004NT1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AFT05MS004NT1. For precise diagrams, and layout, please refer to the original PDF.

Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applicat...

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ent--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment. Narrowband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Gps D Pout (dB) (%) (W) 520 (1) 20.9 74.9 4.9 Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency Pin Gps D Pout (MHz) (W) (dB) (%) (W) 136–174 (2) 0.10 17.8 61.8 6.1 350–520 (3) 0.12 15.4 49.4 4.2 Load Mismatch/Ruggedness Frequency Signal (MHz) Type VSWR Pin Test (W) Voltage Resu

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