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Freescale Semiconductor Electronic Components Datasheet

AFT05MS004NT1 Datasheet

RF Power LDMOS Transistor

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Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
Designed for handheld two--way radio applications with frequencies from
136 to 941 MHz. The high gain, ruggedness and wideband performance of this
device make it ideal for large--signal, common--source amplifier applications in
handheld radio equipment.
Narrowband Performance (7.5 Vdc, TA = 25C, CW)
Frequency
(MHz)
Gps D Pout
(dB) (%) (W)
520 (1)
20.9 74.9
4.9
Wideband Performance (7.5 Vdc, TA = 25C, CW)
Frequency Pin Gps D Pout
(MHz)
(W) (dB) (%)
(W)
136–174 (2)
0.10 17.8 61.8
6.1
350–520 (3)
0.12 15.4 49.4
4.2
Load Mismatch/Ruggedness
Frequency Signal
(MHz)
Type
VSWR
Pin Test
(W) Voltage Result
435(3)
CW > 65:1 at all
0.24
Phase Angles (3 dB Overdrive)
9.0 No Device
Degradation
1. Measured in 520 MHz narrowband test circuit.
2. Measured in 136–174 MHz VHF broadband reference circuit.
3. Measured in 350–520 MHz UHF broadband reference circuit.
Features
Characterized for Operation from 136 to 941 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band
Exceptional Thermal Performance
Extreme Ruggedness
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
Typical Applications
Output Stage VHF Band Handheld Radio
Output Stage UHF Band Handheld Radio
Output Stage for 700–800 MHz Handheld Radio
Driver for 10–1000 MHz Applications
Document Number: AFT05MS004N
Rev. 0, 7/2014
AFT05MS004NT1
136–941 MHz, 4 W, 7.5 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
SOT--89
Source
2
123
Gate Source Drain
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS004NT1
1


Freescale Semiconductor Electronic Components Datasheet

AFT05MS004NT1 Datasheet

RF Power LDMOS Transistor

No Preview Available !

Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range (1,2)
Total Device Dissipation @ TC = 25C
Derate above 25C
VDSS
VGS
VDD
Tstg
TC
TJ
PD
–0.5, +30
–6.0, +12
12.5, +0
–65 to +150
–40 to +150
–40 to +150
28
0.23
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79C, 4.0 W CW, 7.5 Vdc, IDQ = 100 mA, 520 MHz
Table 3. ESD Protection Characteristics
RJC 4.4 C/W
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1C, passes 1000 V
A, passes 100 V
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
1 260 C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 30 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 7.5 Vdc, VGS = 0 Vdc)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 67 Adc)
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 700 mAdc)
Forward Transconductance
(VDS = 7.5 Vdc, ID = 4.0 Adc)
IDSS
IDSS
IGSS
— 2 Adc
— 1 Adc
— 500 nAdc
VGS(th)
1.7
2.2
2.5
Vdc
VDS(on)
.22
Vdc
gfs — 4.0 —
S
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 7.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.63 —
pF
Output Capacitance
(VDS = 7.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 34.8 —
pF
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Ciss — 57.6 —
pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
AFT05MS004NT1
2
RF Device Data
Freescale Semiconductor, Inc.


Part Number AFT05MS004NT1
Description RF Power LDMOS Transistor
Maker Freescale Semiconductor
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