Overview: Freescale Semiconductor Technical Data RF Power LDMOS Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from
136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in
handheld radio equipment. Narrowband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Gps D Pout (dB) (%) (W) 520 (1) 20.9 74.9 4.9 Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency Pin Gps D Pout (MHz) (W) (dB) (%) (W) 136–174 (2) 0.10 17.8 61.8 6.1 350–520 (3) 0.12 15.4 49.4 4.2 Load Mismatch/Ruggedness Frequency Signal (MHz) Type VSWR Pin Test (W) Voltage Result 435(3) CW > 65:1 at all 0.24 Phase Angles (3 dB Overdrive) 9.0 No Device Degradation 1. Measured in 520 MHz narrowband test circuit. 2. Measured in 136–174 MHz VHF broadband reference circuit. 3. Measured in 350–520 MHz UHF broadband reference circuit.
