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MBC13900 - NPN Silicon Low Noise Transistor

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Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 MBC13900 NPN Silicon Low Noise Transistor (Scale 2:1) Package Information Plastic Package Case 318M (SOT-343) Ordering Information 1 Introduction The MBC13900 is a high performance transistor fabricated using a 15 GHz fτ bipolar IC process. It is housed in the 4-lead SC-70 (SOT-343) surface mount plastic package resulting in a parasitic effect reduction and RF performance enhancements. The high performance at low power makes the MBC13900 suitable for front-end applications in portable wireless systems such as pagers, cellular and cordless phones. • Low Noise Figure, NFmin = 0.8 dB (Typ) @ 0.9 GHz, 2.0 V and 5.0 mA • Maximum Stable Gain, 22 dB @ 0.9 GHz, 2.0 V and 5.