MDE6IC7120NR1, MDE6IC7120GNR1 Datasheet - Freescale Semiconductor

MDE6IC7120NR1 RF LDMOS Wideband Integrated Power Amplifiers

0.01 μF, 50 V Chip Capacitors 1.0 μF, 35 V Chip Capacitors 68 pF Chip Capacitors 10 μF, 35 V Chip Capacitors 220 μF, 50 V Electrolytic Capacitors 18 pF Chip Capacitors 1.0 pF Chip Capacitors 8.2 pF Chip Capacitors 50 Ω, 3 dB Hybrid Coupler 50 Ω, 10 W Termination 4.3 KΩ, 1/4 W Chip Resistors 0.020″, .

Freescale Semiconductor Technical Data Document Number: MDE6IC7120N Rev. 0, 10/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC7120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 768 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 80 mA, IDQ2A = .

MDE6IC7120NR1 Features

* Production Tested in a Symmetrical Doherty Configuration

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters

* On - Chip Matching (50 Ohm Input, DC Block

MDE6IC7120GNR1_FreescaleSemiconductor.pdf

MDE6IC7120NR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MDE6IC7120NR1, MDE6IC7120GNR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MDE6IC7120NR1, MDE6IC7120GNR1

Manufacturer:

Freescale Semiconductor

File Size:

550.43 KB

Description:

Rf ldmos wideband integrated power amplifiers.

Note:

This datasheet PDF includes multiple part numbers: MDE6IC7120NR1, MDE6IC7120GNR1.
Please refer to the document for exact specifications by model.

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MDE6IC7120NR1 MDE6IC7120GNR1 LDMOS Wideband Integrated Power Amplifiers Freescale Semiconductor