MDE6IC9120GNR1 Datasheet RF LDMOS Wideband Integrated Power Amplifiers

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MDE6IC9120GNR1 rf ldmos wideband integrated power amplifiers by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MDE6IC9120GNR1
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	367.69 KB
Description	RF LDMOS Wideband Integrated Power Amplifiers
Datasheet	MDE6IC9120GNR1 Datasheet

Overview

Freescale Semiconductor Technical Data Document Number: MDE6IC9120N Rev.

0, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC9120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 920 to 960 MHz.

This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Key Features

Production Tested in a Symmetrical Doherty Configuration.
100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
On - Chip Matching (50 Ohm Input, DC Blocked).
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
Integrated ESD Protection.
225°C Capable Plastic Package.
RoHS Complian.

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