MDE6IC9120GNR1 Description
Freescale Semiconductor Technical Data Document Number: 0, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC9120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.
MDE6IC9120GNR1 Key Features
- Production Tested in a Symmetrical Doherty Configuration
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Series Equivalent Large
- Signal Impedance Parameters and mon Source S
- Parameters
- Chip Matching (50 Ohm Input, DC Blocked)
- Integrated Quiescent Current Temperature pensation with Enable/Disable Function (1)
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS pliant