Overview: Freescale Semiconductor Technical Data Document Number: MDE6IC9120N Rev. 0, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers
The MDE6IC9120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA, VG2B = 1.6 Vdc, Pout = 25 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 32.5 32.0 31.3 PAE (%) 38.4 38.0 37.7 Output PAR (dB) 6.6 6.7 7.0 ACPR (dBc) - 39.0 - 40.4 - 39.6 MDE6IC9120NR1 MDE6IC9120GNR1
920 - 960 MHz, 25 W AVG., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 146 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Stable into a 5:1 VSWR.
