* Characterized with series equivalent large
* signal impedance parameters and common source S
* parameters
* Internally pre
* matched for ease of use
* Qualified for operation up to 28 Vdc
* Integrated ESD protection
* 150C case operating temperature
* 225
MHE1003N Datasheet (353.53 KB)
MHE1003N
Freescale Semiconductor
353.53 KB
Rf power ldmos transistor.
Freescale Semiconductor Technical Data Document Number: MHE1003N Rev. 0, 7/2016 RF Power LDMOS Transistor N Channel Enhancement Mode.
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