MHE1003N Description
Freescale Semiconductor Technical Data Document Number: 0, 7/2016 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 220 W CW high efficiency RF power transistor is designed for consumer and mercial cooking applications operating in the 2450 MHz ISM band.
MHE1003N Key Features
- Characterized with series equivalent large--signal impedance parameters and mon source S--parameters
- Internally pre--matched for ease of use
- Qualified for operation up to 28 Vdc
- Integrated ESD protection
- 150C case operating temperature
- 225C die temperature capability