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MHV5IC1810NR2 - RF LDMOS Wideband Integrated Power Amplifier

Description

22 pF 100A Chip Capacitor 8.2 pF 100A Chip Capacitors 10 nF Chip Capacitors (0805) 6.8 μF Chip Capacitors (1812) 3.3 pF 100A Chip Capacitors 0.5 pF 100A Chip Capacitors 1 kΩ, 1/8 W Chip Resistors (0805) Part Number 100A220GWT 100A8R2CW 08055C103KAT C4532X5R1H685MT 100A3R3BW 100A0R5BW Manufacturer AT

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters www. DataSheet4U. com and Common Source Scattering Parameters.
  • On - Chip Matching (50 Ohm Input, >5 Ohm Output).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function.
  • On - Chip Current Mirror gm Reference FET for Self Biasing.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 0, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats. Final Application • Typical Two - Tone Performance: VDD = 28 Volts, IDQ1 = 120 mA, IDQ2 = 90 mA, Pout = 5 Watts Avg.
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