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MMG3003NT1 - Heterojunction Bipolar Transistor

Description

Table 6.

Table 7.

Features

  • Frequency: 40--3600 MHz.
  • P1dB: 24 dBm @ 900 MHz.
  • Small--Signal Gain: 20 dB @ 900 MHz.
  • Third Order Output Intercept Point: 40.5 dBm @ 900 MHz.
  • Single Voltage Supply.
  • Internally Matched to 50 Ohms.
  • Cost--effective SOT--89 Surface Mount Plastic Package.
  • In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG3003NT1 Rev. 9, 9/2014 MMG3003NT1 40--3600 MHz, 20 dB 24 dBm InGaP HBT GPA SOT--89 Table 1. Typical Performance.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 3600 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF. Features  Frequency: 40--3600 MHz  P1dB: 24 dBm @ 900 MHz  Small--Signal Gain: 20 dB @ 900 MHz  Third Order Output Intercept Point: 40.5 dBm @ 900 MHz  Single Voltage Supply  Internally Matched to 50 Ohms  Cost--effective SOT--89 Surface Mount Plastic Package  In Tape and Reel.
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