MMG3006NT1 Heterojunction Bipolar Transistor

Freescale Semiconductor

Description

NXP Semiconductors Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3006NT1 is a gene.
Name Pin Number Description VBA RFin 1 2, 3, 4 Bias voltage supply. coupled and require.

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Datasheet Specifications

Part number: MMG3006NT1
Manufacturer: Freescale Semiconductor
File Size: 473.10 KB
Datasheet: MMG3006NT1-FreescaleSemiconductor.pdf
Description: Heterojunction Bipolar Transistor

Features

* Frequency: 400
* 2400 MHz
* P1dB: 33 dBm @ 900 MHz
* Small
* signal gain: 17.5 dB @ 900 MHz
* Third order output intercept point: 49 dBm @ 900 MHz
* Single 5 V supply
* Internally input prematched to 50 ohms Document Number: MMG3006NT1 Rev. 6, 12/2017 MMG3006NT

Applications

* It is suitable for applications with frequencies from 400 to 2400 MHz such as cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small

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MMG3006NT1 Heterojunction Bipolar Transistor Freescale Semiconductor

Freescale Semiconductor MMG3006NT1-like datasheet