MMG3006NT1 Datasheet - Freescale Semiconductor

Heterojunction Bipolar Transistor

MMG3006NT1 Features

* Frequency: 400

* 2400 MHz

* P1dB: 33 dBm @ 900 MHz

* Small

* signal gain: 17.5 dB @ 900 MHz

* Third order output intercept point: 49 dBm @ 900 MHz

* Single 5 V supply

* Internally input prematched to 50 ohms Document Number: MMG3006NT1 Rev. 6, 12/2017 MMG3006NT

MMG3006NT1 General Description

Name Pin Number Description VBA RFin 1 2, 3, 4 Bias voltage supply. RF input for the power amplifier. This pin is DC *coupled and requires a DC *blocking series capacitor. RFout/ VCC VCC GND 9, 10, 11, 12 16 Backside Center Metal RF output for the power amplifier. This pin is .

MMG3006NT1 Datasheet (473.10 KB)

MMG3006NT1 Datasheet Preview — Preview of MMG3006NT1 PDF

Datasheet Details

Part number:

MMG3006NT1

Manufacturer:

Freescale Semiconductor

File Size:

473.10 KB

Description:

Heterojunction bipolar transistor.
NXP Semiconductors Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3006NT1 is a gene.

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