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MMG3006NT1 Datasheet Heterojunction Bipolar Transistor

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

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Overview

NXP Semiconductors Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3006NT1 is a general purpose amplifier that is internally input prematched and designed for a broad range of Class A, small--signal, high linearity, general purpose applications.

It is suitable for applications with frequencies from 400 to 2400 MHz such as cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small--signal RF.

Key Features

  • Frequency: 400--2400 MHz.
  • P1dB: 33 dBm @ 900 MHz.
  • Small--signal gain: 17.5 dB @ 900 MHz.
  • Third order output intercept point: 49 dBm @ 900 MHz.
  • Single 5 V supply.
  • Internally input prematched to 50 ohms Document Number: MMG3006NT1 Rev. 6, 12/2017 MMG3006NT1 400--2400 MHz, 17.5 dB 33 dBm InGaP HBT GPA QFN 4  4--16L Table 1. Typical Performance (1) Characteristic 900 1960 2140 Symbol MHz MHz MHz Unit Small--Signal Gain (S21) Gp 17.5 14 14 dB Input Return Loss (.

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