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MMG3009NT1 - Heterojunction Bipolar Transistor

Description

Table 6.

Table 7.

Features

  • Frequency: 0 to 6000 MHz.
  • P1dB: 18 dBm @ 900 MHz.
  • Small--Signal Gain: 15 dB @ 900 MHz.
  • Third Order Output Intercept Point: 34 dBm @ 900 MHz.
  • Single 5 V Supply.
  • Internally Matched to 50 Ohms.
  • Cost--effective SOT--89 Surface Mount Plastic Package.
  • In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG3009NT1 Rev. 7, 9/2014 MMG3009NT1 0--6000 MHz, 15 dB 18 dBm InGaP HBT GPA SOT--89 Table 1. Typical Performance (1).

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LIFETIME BUY LAST ORDER 24 MAY 14 LAST SHIP 24 MAY 15 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The MMG3009NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF.
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