MMG3014NT1 - Heterojunction Bipolar Transistor

Freescale Semiconductor

The MMG3014NT1 by Freescale Semiconductor is a Heterojunction Bipolar Transistor. Below is the official datasheet preview.

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MMG3014NT1 Heterojunction Bipolar Transistor by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MMG3014NT1** Heterojunction Bipolar Transistor datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MMG3014NT1
Manufacturer	Freescale Semiconductor
File Size	491.71 KB
Description	Heterojunction Bipolar Transistor
Datasheet	MMG3014NT1-FreescaleSemiconductor.pdf
Additional preview pages of the MMG3014NT1 datasheet.

MMG3014NT1 Product details

Description

Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply 2 123 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Conditions/Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Table 7. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Class 1B A IV Rating Package Peak Temperature Unit 1 260 C MMG3014NT1 2 RF Device Data Freescale Semiconducto

Features

Frequency: 40--4000 MHz.
P1dB: 25 dBm @ 900 MHz.
Small--Signal Gain: 19.5 dB @ 900 MHz.
Third Order Output Intercept Point: 40.5 dBm @ 900 MHz.
Single 5 V Supply.
Active Bias.
Cost--effective SOT--89 Surface Mount Plastic Package.
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG3014NT1 Rev. 5, 3/2016 MMG3014NT1 40--4000 MHz, 19.5 dB 25 dBm InGaP HBT GPA SOT--89 Table 1. Typical Performance (1) Characterist.

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Published: Nov 28, 2014 |