MMZ09312BT1 transistor equivalent, heterojunction bipolar transistor.
* Frequency: 400--1000 MHz
* P1dB: 29.6 dBm @ 900 MHz
* Power Gain: 31.7 dB @ 900 MHz
* OIP3: 42 dBm @ 900 MHz
* Active Bias Control (adjustable exter.
as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from .
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