MMZ09312BT1 Description
Freescale Semiconductor Technical Data Document Number: 1, 2/2012 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ09312B is a 2 -- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications...
MMZ09312BT1 Key Features
- Frequency: 400--1000 MHz
- P1dB: 29.6 dBm @ 900 MHz
- Power Gain: 31.7 dB @ 900 MHz
- OIP3: 42 dBm @ 900 MHz
- Active Bias Control (adjustable externally)
- Single 3 to 5 Volt Supply
- Performs Well with Digital Predistortion Systems
- Single--ended Power Detector
- Cost--effective QFN Surface Mount Package
- In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel