MRF18060ALR3 Description
Freescale Semiconductor Technical Data Document Number: 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
MRF18060ALR3 Key Features
- Internally Matched for Ease of Use
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Excellent Thermal Stability
- Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel
- CHANNEL RF POWER MOSFETs
- 06, STYLE 1 NI
MRF18060ALR3 Applications
- PCS/cellular radio and WLL applications. Specified for GSM 1805