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MRF18060ALR3 - RF Power Field Effect Transistors

Key Features

  • Internally Matched for Ease of Use.
  • High Gain, High Efficiency and High Linearity.
  • Integrated ESD Protection.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MRF18060ALR3 MRF18060ALSR3 1805- 1880 MHz, 60 W, 26 V.

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Full PDF Text Transcription for MRF18060ALR3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MRF18060ALR3. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Late...

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RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Specified for GSM 1805 - 1880 MHz.

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