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MRF19085LR3 - RF Power Field Effect Transistors

Description

Part Number Manufacturer B1 C1 C2, C7 C3, C9 C4, C10 C5 C6 C8 C11, C12 L1 N1, N2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Board PCB Short Ferrite Bead 51 pF Chip Capacitor 5.1 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 μF Chip Capacitors 0.1 μF Tantalum Surface Mount Capacitor 10 pF Chip Capacito

Features

  • Internally Matched for Ease of Use.
  • High Gain, High Efficiency and High Linearity.
  • Integrated ESD Protection.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56.

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Other Datasheets by Freescale Semiconductor

Full PDF Text Transcription

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance IISDQ- 9=58C5D0MmAA,(PPioloutt,=S1y8ncW, PatatsginAgv,gT.,rfa1ff=ic 1fo9r6V0DMDH=z2, 6f2V=ol1ts9,62.5 Codes 8 Through 13) MHz 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 18 Watts Avg.
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