MRF377HR3 Datasheet (RF Power Field-Effect Transistors)

Part: MRF377HR3
Manufacturer: Freescale Semiconductor
Size: 1.28 MB

MRF377HR3 Key Features

Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Device Designed for Push--Pull Operation Only
Integrated ESD Protection
Excellent Thermal Stability
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40μ″ Nominal
RoHS pliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
0.5, +65

MRF377HR3 Description

LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field--Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for broadband mercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, mon source amplifier applications in 32 volt digital...