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MRF377HR5 Datasheet RF Power Field-Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the MRF377HR5 datasheet PDF. This datasheet also includes the MRF377HR3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MRF377HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF377H Rev.

1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.

The high gain and broadband performance of these devices make them ideal for large- signal, common source amplifier applications in 32 volt digital television transmitter equipment.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Device Designed for Push - Pull Operation Only.
  • Integrated ESD Protection.
  • Excellent Thermal Stability.
  • Lower Thermal Resistance Package.
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 in.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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