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MRF5S19060NBR1 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the MRF5S19060NBR1 datasheet PDF. This datasheet also includes the MRF5S19060NR1 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MRF5S19060NR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev.

6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz.

The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 28 Volt base station equipment.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • 200°C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF5S19060NR1 MRF5S19060NBR1 1930 - 1990 MHz, 12 W AVG. , 28 V 2 x N - CDMA.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S19060NR1 RF Power Field Effect Transistors
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