Description
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev.6, 5/2006 RF Power Field Effect Transistors N - Chann.
1 μF, 35 V Tantalum Capacitor 10 pF 100B Chip Capacitor 6.
Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* 200°C Capable Plastic Package
* N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
* In Tape and Ree
Applications
* with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 28 Volt base station equipment.
* Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 12 Wat
