MRF5S19060NR1 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF5S19060NR1 rf power field effect transistors by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF5S19060NR1
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	534.44 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF5S19060NR1 Datasheet

Overview

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev.

6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz.

The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 28 Volt base station equipment.

Key Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
200°C Capable Plastic Package.
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF5S19060NR1 MRF5S19060NBR1 1930 - 1990 MHz, 12 W AVG. , 28 V 2 x N - CDMA.

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