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MRF5S21045 - RF Power Field Effect Transistors

Download the MRF5S21045 datasheet PDF. This datasheet also covers the MRF5S21045MBR1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Description

220 nF Chip Capacitor (1812) 6.8 pF 100B Chip Capacitors 6.8 µF Chip Capacitors (1812) 220 µF, 63 V Electrolytic Capacitor, Radial 1 pF 100B Chip Capacitors 1.5 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 10 kW, 1/4 W Chip Resistors 10 W, 1/4 W Chip Resistor Part Number 1812Y224KXA 100B6R8CW C

Features

  • eescale Semiconductor ηD, DRAIN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF5S21045MBR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S21045MBR1 RF Power Field Effect Transistors
MRF5S21045MR1 RF Power Field Effect Transistors
MRF5S21045NBR1 RF Power Field Effect Transistors
MRF5S21045NR1 RF Power Field Effect Transistors
MRF5S21090HR3 RF Power Field Effect Transistors

Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S21045 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 10 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.5% IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 39 dBc @ 3.
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