* www.DataSheet4U.com
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Integrated ESD Protection
* 200°C Capable Plastic Package
* N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
* In Tape and Reel. R1 Suffix = 500 Units
MRF5S9070NR1 Datasheet (580.15 KB)
MRF5S9070NR1
Freescale Semiconductor
580.15 KB
Single n-cdma lateral n-channel broadband rf power mosfet.
Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode.
📁 Related Datasheet
MRF5S9080NBR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs (Freescale Semiconductor)
MRF5S9080NR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs (Freescale Semiconductor)
MRF5S9100NBR1 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs (Freescale Semiconductor)
MRF5S9100NR1 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs (Freescale Semiconductor)
MRF5S9101NBR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs (Freescale Semiconductor)
MRF5S9101NR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs (Freescale Semiconductor)
MRF5S9150HR3 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs (Freescale Semiconductor)
MRF5S9150HSR3 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs (Freescale Semiconductor)
MRF5S19060MBR1 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF5S19060MR1 RF Power Field Effect Transistors (Freescale Semiconductor)
TAGS
Image Gallery
