MRF5S9070NR1 Overview
Freescale Semiconductor Technical Data Document Number: 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, mon - source amplifier applications in 26 volt base station equipment.
MRF5S9070NR1 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Integrated ESD Protection
- 200°C Capable Plastic Package
- N Suffix Indicates Lead
- Free Terminations. RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel
- CDMA LATERAL N
- CHANNEL BROADBAND RF POWER MOSFET
- 2 PLASTIC