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Freescale Semiconductor Electronic Components Datasheet

MRF5S9070NR1 Datasheet

SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
this device make it ideal for large - signal, common - source amplifier applica-
tions in 26 volt base station equipment.
Typical Single - Carrier N
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13)
Power Gain — 17.8 dB
Drain Efficiency — 30%
ACPR @ 750 kHz Offset — - 47 dBc in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 70 Watts CW
Output Power
Features
www.DataShCeheat4raUc.cteormized with Series Equivalent Large - Signal Impedance Parameters
Integrated ESD Protection
200°C Capable Plastic Package
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MRF5S9070NR1
Rev. 6, 5/2006
MRF5S9070NR1
880 MHz, 70 W, 26 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265 - 08, STYLE 1
TO - 270 - 2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
VDSS
VGS
PD
Tstg
TJ
Symbol
- 0.5, + 68
- 0.5, + 15
219
1.25
- 65 to +150
200
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 70 W CW
Case Temperature 78°C, 14 W CW
RθJC
0.80
0.93
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1 260
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
Unit
°C
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S9070NR1
1


Freescale Semiconductor Electronic Components Datasheet

MRF5S9070NR1 Datasheet

SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

No Preview Available !

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
1 μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μA)
VGS(th)
2
2.7
4 Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 600 mAdc)
VGS(Q)
3.7
— Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
www.DFaotrawSahrdeeTrta4nUs.ccoonmductance
(VDS = 10 Vdc, ID = 4 Adc)
VDS(on)
gfs
0.18 0.22 Vdc
4.7 —
S
Dynamic Characteristic
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss — 126 — pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
34
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.37 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 14 W Avg., f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF
Power Gain
Gps 17 17.8 — dB
Drain Efficiency
ηD 29 30 — %
Adjacent Channel Power Ratio
ACPR
- 47 - 45 dBc
Input Return Loss
IRL — - 19 - 9 dB
Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) VDD = 26 Vdc,
IDQ = 400 mA, Pout = 60 W, f = 921 - 960 MHz
Power Gain
Gps — 16.4 —
Drain Efficiency
ηD — 62 —
Input Return Loss
IRL — - 12 —
dB
%
dB
Pout @ 1 dB Compression Point
(f = 940 MHz)
P1dB
68
W
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 οhm system)
VDD = 26 Vdc, IDQ = 400 mA, Pout = 25 W Avg., f = 921 - 960 MHz, GSM EDGE Signal
Power Gain
Gps — 17 —
Drain Efficiency
ηD — 44 —
Error Vector Magnitude
EVM
1.5
dB
%
%
Spectral Regrowth at 400 kHz Offset
SR1 — - 62 — dBc
Spectral Regrowth at 600 kHz Offset
SR2 — - 78 — dBc
(continued)
MRF5S9070NR1
2
RF Device Data
Freescale Semiconductor


Part Number MRF5S9070NR1
Description SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
Maker Freescale Semiconductor
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