MRF6S21100HR3 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF6S21100HR3 rf power field effect transistors by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF6S21100HR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	696.21 KB
Description	RF Power Field Effect Transistors
Download	MRF6S21100HR3 Download (PDF)

Overview

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev.

7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applications.

Key Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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