* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App
MRF6S21100HSR3 Datasheet (696.21 KB)
MRF6S21100HSR3
Freescale Semiconductor
696.21 KB
Rf power field effect transistors.
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Chann.
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