MRF6S21100HSR3, MRF6S21100HR3 - RF Power Field Effect Transistors

Freescale Semiconductor

The MRF6S21100HSR3 by Freescale Semiconductor is a RF Power Field Effect Transistors. Below is the official datasheet preview.

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MRF6S21100HSR3 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MRF6S21100HSR3** RF Power Field Effect Transistors datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MRF6S21100HSR3, MRF6S21100HR3
Manufacturer	Freescale Semiconductor
File Size	696.21 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S21100HR3_FreescaleSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF6S21100HSR3, MRF6S21100HR3. Please refer to the document for exact specifications by model.
Additional preview pages of the MRF6S21100HSR3 datasheet.

MRF6S21100HSR3 Product details

Description

Part Number 2743019447 T491C105M050AT EEV - HB1H100P ATC100B102JT500XT CDR33BX104AKWY ATC100B5R1JT500XT ATC100B150JT500XT ATC100B6R8JT500XT T491X226K035AT 515D107M050BB6AE3 CRCW08051000FKTA CRCW080510R0FKTA Manufacturer Fair - Rite Kemet Panasonic ATC Kemet ATC ATC ATC Kemet Vishay/Sprague Vishay Vishay MRF6S21100HR3 MRF6S21100HSR3 RF Device Data Freescale Semiconductor 3 R1 C1 B1 R2 C5 C8 C9 C10 C14 VGG C11 C2 C4 C6 C3 C12 VDD C13 C7 CUT OUT AREA 2.1 GHz NI780 Rev 4 Figure 2. MRF6S21

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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Published: Mar 23, 2007 |