MRF6S21100NR1, MRF6S21100NBR1 - RF Power Field Effect Transistors

Freescale Semiconductor

The MRF6S21100NR1 by Freescale Semiconductor is a RF Power Field Effect Transistors. Below is the official datasheet preview.

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MRF6S21100NR1 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MRF6S21100NR1** RF Power Field Effect Transistors datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MRF6S21100NR1, MRF6S21100NBR1
Manufacturer	Freescale Semiconductor
File Size	882.80 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S21100NBR1_FreescaleSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF6S21100NR1, MRF6S21100NBR1. Please refer to the document for exact specifications by model.
Additional preview pages of the MRF6S21100NR1 datasheet.

MRF6S21100NR1 Product details

Description

Part Number 25008051107Y0 T491D106K035AT C1825C103J1GAC ATC600B5R1BT250XT GRM55DR61H106KA88L ATC600B100BT250XT ATC600B1R1BT250XT AT600B5R1BT250XT ATC600B8R2BT250XT CRCW12061000FKTA CRCW12061001FKTA CRCW120610R0FKTA Manufacturer Fair - Rite Kemet Kemet ATC Murata ATC ATC ATC ATC Vishay Vishay Vishay MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 3 B1 R3 R1 R2 C2 C1 C3 C4 C5 C6 C7 C8 CUT OUT AREA C9 C11 C12 MRF6S21100N/NB, Rev.3 C10 Figure 2. MRF6S21100NR1(NBR1) T

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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Published: Mar 23, 2007 |