• Part: MRF6S9045
  • Description: RF Power Field Effect Transistors
  • Category: Transistor
  • Manufacturer: Freescale Semiconductor
  • Size: 530.99 KB
MRF6S9045 Datasheet (PDF) Download
Freescale Semiconductor
MRF6S9045

Key Features

  • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 350 mA, Pout = 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain - 22.7 dB Drain Efficiency - 32% ACPR @ 750 kHz Offset - - 47 dBc @ 30 kHz Bandwidth GSM EDGE Application
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 16 Watts Avg., Full Frequency Band (921 - 960 MHz) Power Gain - 20 dB Drain Efficiency - 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM - 1.5% rms GSM Application