MRF7S16150HR3 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF7S16150HR3 rf power field effect transistors by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF7S16150HR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	491.15 KB
Description	RF Power Field Effect Transistors
Download	MRF7S16150HR3 Download (PDF)

Overview

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev.

1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 1700 MHz.

Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.

Key Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S16150HR3 MRF7S16150HSR3 1600- 1660 MHz, 32 W AVG. , 28 V WiMAX.

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