MRF7S18125AHR3 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF7S18125AHR3 rf power field effect transistors by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF7S18125AHR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	511.61 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF7S18125AHR3 Datasheet

Overview

Freescale Semiconductor Technical Data www.DataSheet4U.com Document Number: MRF7S18125AH Rev.

0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulations.

Key Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S18125AHR3 MRF7S18125AHSR3 1805- 1880 MHz, 125 W CW, 28 V GSM, GSM EDGE.

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