MRF7S18125AHSR3 transistors equivalent, rf power field effect transistors.
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* RoHS Complia.
with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modula.
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