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MRF7S18125AHSR3 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the MRF7S18125AHSR3 datasheet PDF. This datasheet also includes the MRF7S18125AHR3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MRF7S18125AHR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Freescale Semiconductor Technical Data www.DataSheet4U.com Document Number: MRF7S18125AH Rev.

0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulations.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S18125AHR3 MRF7S18125AHSR3 1805- 1880 MHz, 125 W CW, 28 V GSM, GSM EDGE.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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